SM220MH Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – 2.0 Amp Surface Mount Schottky Barrier Rectifiers

Elektronische Bauelemente
SM220MH~SM2100MH
20 ~ 100 V
2.0 Amp Surface Mount Schottky Barrier Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen-free and RoHS Compliant
FEATURES
z Batch process design, excellent power dissipation offers.
better reverse leakage current and thermal resistance.
z Low profile surface mounted application.
in order to optimize board space.
z Low power loss and low forward voltage drop
z High surge, high current capability, and high efficiency.
z Fast switching for high efficiency.
z Guard-ring for overvoltage protection.
z Ultra high-speed switching
z Silicon epitaxial planar chip, metal silicon junction.
PACKAGING INFORMATION
z Small plastic SMD package.
z Case: Molded plastic
z Epoxy: UL94-V0 rate flame retardant
z Weight: 0.0110 g (Approximately)
1
Cathode
2
Anode
SOD-123MH
A
B
F
D
C
E
E
REF.
A
B
C
Millimeter
Min. Max.
3.30 3.70
1.40 1.80
0.60 1.00
REF.
D
E
F
Millimeter
Min. Max.
3.10 (MAX.)
0.80 (TYP.)
0.30 (TYP.)
MARKING CODE
Part Number
SM220MH
SM230MH
SM240MH
SM250MH
Marking Code
22
23
24
25
Part Number
SM260MH
SM280MH
SM2100MH
Marking Code
26
28
20
MAXIMUM RATINGS (T_a = 25°C unless otherwise specified.)
PART NUMBERS
PARAMETERS
Recurrent Peak
Reverse Voltage (Max.)
SYMBOL SM
SM
SM
SM
SM
220
230
240
250
260
MH
MH
MH
MH
MH
V_RRM
20
30
40
50
60
RMS Voltage (Max.)
V_RMS
14
21
28
35
42
Reverse Voltage (Max.)
V_R
20
30
40
50
60
Forward Voltage (Max.)
V_F
0.50
0.70
Forward
Rectified Current (Max.)
I_O
2.0
SM
SM
280 2100
MH MH
80 100
56 70
80 100
0.85
UNITS
V
V
V
V
TESTING CONDITIONS
A
See Fig.1
Peak Forward Surge Current
Reverse Current (Max.)
Thermal Resistance (Typ.)
Diode Junction
Capacitance (Typ.)
Storage and Operating
Temperature Range
I_FSM
40
I_R
R_θJA
C_J
T_STG, T_J
0.5
10
85
160
-65 ~ 175, -55 to 125
-65 ~ 175, -55 to 150
A
mA
°C/W
pF
°C
8.3ms single half sine-wave
superimposed on rated load
(JEDEC method)
V_R=V_RRM, T_a=25°C
V_R=V_RRM, T_a=125°C
Junction to ambient
f=1MHz and applied 4V DC
reverse voltage
01-December-2008 Rev. A
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