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| SM2200B Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – 2.0 A Schottky Barrier Rectifiers | |||
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Elektronische Bauelemente
SM2200B
VOLTAGE 200 V
2.0 A Schottky Barrier Rectifiers
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
FEATURES
 High Current Capability
 Extremely Low Thermal Resistance
 For Surface Mount Application
 Higher Temp Soldering : 250°C for 10 Seconds at Terminals
 Low Revise Current
MECHANICAL DATA
 Case: Molded Plastic
 Epoxy: UL 94V-0 Rate Flame Retardant
 Lead: Axial Leads, Solderable per MIL-STD-202
method 208 Guaranteed
 Polarity: Color Band Denotes Cathode End
 Mounting Position: Any
DO-214AA (SMB)
.083(2.11)
.075(1.91)
.096(2.44)
.083(2.13)
.050(1.27)
.030(0.76)
.185(4.70)
.160(4.06)
.155(3.94)
.130(3.30)
.012(0.31)
.006(0.15)
(..020083)MAX.
.220(5.59)
.200(5.08)
Dimens ions in inches and (millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25°C ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
SYMBOL
Peak Repetitive Peak reverse voltage
VRRM
Working Peak Reverse Voltage
VRWM
Maximum DC Blocking Voltage
VR
Average Forward Current @TJ=25°C
IF(AV)
Peak Forward Current @ 8.3 ms Half Sine
IFSM
Maximum Instantaneous Forward Voltage
VF @ IFM = 2.0 A, TA = 25°C
VF @ IFM = 2.0 A, TA = 75°C
VF
VF @ IFM = 2.0 A, TA = 125°C
Maximum DC Reverse Current
At Rated DC Blocking Voltage @ TJ = 25°C
IR
At Rated DC Blocking Voltage @ TJ = 100°C
Typical Junction Capacitance (Note 1)
CJ
Typical Thermal Resistance (Note 2)
RθJA
Voltage Rate of Chance (Rated VR)
dv/dt
Operating Temperature Range
TJ
Storage temperature
TSTG
NOTES:
1. Measured at 1MHz and applied reverse voltage of 5.0 V D.C.
2. Thermal Resistance Junction to Ambient.
SM2200B
200
2
60
0.85
0.75
0.68
5
50
40
50
1000
-50 ~ + 125
-65 ~ + 150
UNITS
V
A
A
V
μA
pF
°C/W
V/us
°C
°C
http://www.SeCoSGmbH.com/
01-June-2002 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2
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