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SM2020D_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – 20.0 Amp Schottky Barrier Rectifiers
Elektronische Bauelemente
SM2020D~SM20100D
Voltage 20V~ 100V
20.0 Amp Schottky Barrier Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Low forward voltage drop
 High current capability
 High reliability
 High surge current capability
 Epitaxial construction
MECHANICAL DATA
 Case: Molded plastic
 Epoxy: UL94V-0 rate flame retardant
 Lead: Lead solderable per MIL-STD-202
method 208 guaranteed
 Polarity: Color band denotes cathode end
 Mounting position: Any
 Weight: 1.6 grams
PACKAGE INFORMATION
Package
MPQ
TO-263
0.8K
Leader Size
13 inch
TO-263(D2-PACK)
 

REF.
A
b
L4
C
L3
L1
E
Millimeter
Min. Max.
4.00 4.85
0.51 1.00
0.00 0.30
0.30 0.74
1.50 REF
1.78 2.79
9.60 10.67
REF.
c2
b2
D
e
L
L2
Millimeter
Min. Max.
1.10 1.65
1.34 REF
8.0
9.65
2.54 REF
14.6 15.88
1.27 REF
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Parameter
Maximum Repetitive Peak Reverse
Voltage
Symbol
VRRM
SM2020D
20
Part Number
SM2040D SM2060D
40
60
SM20100D
100
Maximum RMS Voltage
VRMS
20
40
60
100
Maximum DC Blocking Voltage
VDC
20
40
60
100
Maximum Average Forward Rectified
Current
IF
Peak Forward Surge Current, 8.3 ms
single half sine-wave superimposed
IFSM
on rated load
Maximum Instantaneous Forward
Voltage @ 10A
VF
Maximum Reverse
TA=25°C
Current at Rated VR Per
IR
Diode
TA=100°C
20
200
0.57
0.68
0.85
0.3
0.15
0.1
45
22.5
7.5
Typical Junction Capacitance 1
CJ
700
460
280
Typical Thermal Resistance 2
RθJC
6
Operating & Storage Temperature
TJ ,TSTG
Notes:
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance Junction to Case. FR4 Board Heat sink size: 10*10*0.2mm.
-55~150
Unit
V
V
V
A
A
V
mA
pF
°C / W
°C
http://www.SeCoSGmbH.com/
03-Jan-2014 Rev.E
Any changes of specification will not be informed individually.
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