SM120N_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – 1.0 Amp Surface Mount Schottky Barrier Rectifiers

Elektronische Bauelemente
SM120N~SM1100N
20 ~ 100 V
1.0 Amp Surface Mount Schottky Barrier Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen-free and RoHS Compliant
FEATURES
Batch process design, excellent power dissipation offers
Better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Very tiny plastic SMD package.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500/228
SOD-323N
A
B
F
D
C
REF.
A
B
C
Millimeter
Min. Max.
2.30 2.70
1.05 1.45
0.80 1.20
E
REF.
D
E
F
E
Millimeter
Min. Max.
1.7
2.1
0.4 TYP
0.30 TYP
PACKAGING INFORMATION
Epoxy: UL94-V0 rated flame retardant
Case: Molded plastic, SOD323N
Terminals: Plated terminals,
solderable per MIL-STD-750, method 2026.
Polarity: Indicated by cathode band
Weight : 0.008 gram
1
Cathode
MARKING CODE
PART NUMBER
SM120N
SM130N
SM140N
SM150N
MARKING CODE
12
13
14
15
2
Anode
PART NUMBER
SM160N
SM180N
SM1100N
MARKING CODE
16
18
10
MAXIMUM RATINGS (T_a = 25°C unless otherwise specified.)
PART NUMBERS
PARAMETERS
SYMB
SM
SM
SM
SM
SM
OL
120
130
140
150
160
N
N
N
N
N
Repetitive Peak Reverse Voltage
VRRM
20
30
40
50
60
RMS Voltage (Max.)
VRMS
14
21
28
35
42
Reverse Voltage (Max.)
VR
20
30
40
50
60
Forward Voltage (Max.)
VF
0.50
0.70
Forward
Rectified Current (Max.)
IO
1.0
SM
SM
180 1100
N
N
80 100
56 70
80 100
0.85
Peak Forward Surge Current
IFSM
30
Reverse Current (Max.)
Thermal Resistance (Typ.)
Diode Junction
Capacitance (Typ.)
Storage and Operating
Temperature Range
IR
RθJA
CJ
TSTG,
TJ
0.5
10
90
120
-65 ~ 175, -55 to 125
-65 ~ 175, -55 to 150
UNIT
V
V
V
V
A
A
mA
°C/W
pF
°C
TESTING CONDITION
See Fig.1
8.3ms single half sine-wave
superimposed on rated load
(JEDEC method)
VR=VRRM, T_A=25°C
VR=VRRM, T_A=125°C
Junction to ambient
f=1MHz and applied 4V DC
reverse voltage
11-Feb-2010 Rev. A
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