SM120MH Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – 1.0 Amp Surface Mount Schottky Barrier Rectifiers

Elektronische Bauelemente
SM120MH~SM1100MH
20 ~ 100 V
1.0 Amp Surface Mount Schottky Barrier Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen-free and RoHS Compliant
FEATURES
z Batch process design, excellent power dissipation offers.
better reverse leakage current and thermal resistance.
z Low profile surface mounted application.
in order to optimize board space.
z Low power loss and low forward voltage drop
z High surge, high current capability, and high efficiency.
z Fast switching for high efficiency.
z Guard-ring for overvoltage protection.
z Ultra high-speed switching
z Silicon epitaxial planar chip, metal silicon junction.
PACKAGING INFORMATION
z Small plastic SMD package.
z Case: Molded plastic
z Epoxy: UL94-V0 rate flame retardant
z Weight: 0.0110 g (Approximately)
1
Cathode
2
Anode
SOD-123MH
A
B
F
D
C
E
E
REF.
A
B
C
Millimeter
Min. Max.
3.30 3.70
1.40 1.80
0.60 1.00
REF.
D
E
F
Millimeter
Min. Max.
3.10 (MAX.)
0.80 (TYP.)
0.30 (TYP.)
MARKING CODE
Part Number
SM120MH
SM130MH
SM140MH
SM150MH
Marking Code
12
13
14
15
Part Number
SM160MH
SM180MH
SM1100MH
Marking Code
16
18
10
MAXIMUM RATINGS (T_a = 25°C unless otherwise specified.)
PART NUMBERS
PARAMETERS
Recurrent Peak
Reverse Voltage (Max.)
SYMBOL SM
SM
SM
SM
SM
120
130
140
150
160
MH
MH
MH
MH
MH
V_RRM
20
30
40
50
60
RMS Voltage (Max.)
V_RMS
14
21
28
35
42
Reverse Voltage (Max.)
V_R
20
30
40
50
60
Forward Voltage (Max.)
V_F
0.50
0.70
SM
SM
180 1100
MH MH
80 100
56 70
80 100
0.85
UNITS
V
V
V
V
TESTING CONDITIONS
Forward
Rectified Current (Max.)
I_O
1.0
A
See Fig.1
Peak Forward Surge Current
I_FSM
Reverse Current (Max.)
I_R
Thermal Resistance (Typ.)
R_θJA
8.3ms single half sine-wave
25
A
superimposed on rated load
(JEDEC method)
0.5
V_R=V_RRM, T_a=25°C
mA
10
V_R=V_RRM, T_a=125°C
98
°C/W Junction to ambient
Diode Junction
Capacitance (Typ.)
Storage and Operating
Temperature Range
C_J
120
T_STG, T_J -65 ~ 175, -55 to 125
-65 ~ 175, -55 to 150
pF
f=1MHz and applied 4V DC
reverse voltage
°C
01-December-2008 Rev. A
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