SM1020C Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – 10.0 AMP Surface Mount Schottky Barrier Rectifiers

Elektronische Bauelemente
SM1020C THRU SM10100C
VOLTAGE 40V ~ 100V
10.0 AMP Surface Mount Schottky Barrier Rectifiers
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
DO-214AB (SMC)
FEATURES
. Low forward voltage drop
. High current capability
. High reliability
. High surge current capability
. Epitaxial construction
MECHANICAL DATA
. Case: Molded plastic
. Epoxy: UL 94V-0 rate flame retardant
. Metallurgically bonded construction
. Polarity: Color band denotes cathode end
. Mounting position: Any
. Weight: 1.10 grams
.124(3.15)
.108(2.75)
.103(2.62)
.079(2.00)
.050(1.27)
.030(0.76)
.280(7.11)
.260(6.60)
.245(6.22)
.220(5.59)
.012(0.31)
.006(0.15)
(..020083)MAX.
.320(8.13)
.305(7.75)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C^O ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
SM1020C
20
SM1040C
40
SM1060C
60
Working Peak Reverse Voltage
20
40
60
Maximum DC Blocking Voltage
20
40
60
Maximum Average Forward Rectified Current,
See Fig. 1
10.0
Peak Forward Surge Current, 8.3 ms Single Half
Sine-Wave Superimposed on Rated Load
180
(JEDEC Method)
Maximum Instantaneous Forward Voltage at 10A
0.56
0.65
Maximum DC Reverse Current Ta=25 к!
0.3
0.2
At Rated DC Blocking Voltage Ta=100 к!
22
15
Typical Junction Capacitance (Note 1)
380
Typical Thermal Resistance RșJC (Note 2)
10
Operating Temperature Range TJ
-50 ~ +150
Storage Temperature Range TSTG
NOTES:
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
-65 ~ +175
2. Thermal Resistance Junction to Ambient Vertical PC Board Mounting 0.5"(12.7mm) Lead Length.
SM10100C
100
100
100
0.83
0.1
10
UNITS
V
V
V
A
A
V
mA
pF
к /W
к
к
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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