SIK04N60SL Datasheet, PDF (1/5 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SIK04N60SL
4A , 600V , R_DS(ON) 2.4Ω
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SIK04N60SL is the highest performance trench
N-ch MOSFETs with extreme high cell density , which provide
excellent R_DS(on) and gate charge for most of the synchronous
buck converter applications .
TO-262
FEATURES
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
1
Gate
2
Drain
3
Source
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
9.80 10.40
9.60 10.50
1.19 1.40
12.3 14.3
1.10 1.50
0.68 1.00
REF.
G
H
I
J
K
L
Millimeter
Min. Max.
4.40 4.85
2.54 BSC
2.70 BSC
4.00 BSC
0.25 0.56
1.10 1.45
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
±30
TC=25°C
4
Continuous Drain Current
ID
TC=100°C
2.5
Pulsed Drain Current
IDM
16
Total Power Dissipation
TC=25°C
PD
Derate above 25°C
Single Pulse Avalanche Energy ¹
EAS
95
0.76
217
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~150
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient
RθJA
62.5
Maximum Thermal Resistance Junction-Case
Notes:
1. L=30mH,IAS=3.45A, VDD=155V, RG=25Ω, Starting TJ =25°C
RθJC
1.32
Unit
V
V
A
A
A
W
mJ
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
17-Jul-2014 Rev. A
Any changes of specification will not be informed individually.
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