SID9971-S Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SID9971-S
25A, 60V, R_DS(ON) 36mΩ
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SID9971-S is the highest performance trench
N-ch MOSFETs with extreme high cell density , which
provide excellent R_DS(ON) and gate charge for most of
the synchronous buck converter applications.
The SID9971-S meet the RoHS and Green Product
requirement with full function reliability approved.
TO-251S
FEATURES
Advanced high cell density Trench technology
Super Low Gate Charge
Green Device Available
MARKING
9971
Date Code
1
Gate
2
Drain
ABSOLUTE MAXIMUM RATINGS
Parameter
3
Source
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current @VGS=10V ¹
Pulsed Drain Current ²
TC=25°C
ID
TC=100°C
IDM
Total Power Dissipation ¹
TC=25°C
PD
TA=25°C
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Maximum Thermal Resistance from Junction to Ambient ¹
RθJA
Maximum Thermal Resistance from Junction to Ambient
Maximum Thermal Resistance from Junction to Case ¹
RθJC
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.731
5.21 5.46
2.20 2.38
0.40 0.58
6.89 7.493
3.98 4.28
REF.
G
H
J
K
M
P
Millimeter
Min. Max.
6.0 6.223
0.85 1.15
2.286 BSC.
0.77 1.14
0.64 0.88
0.40 0.60
Rating
60
±20
25
16
50
39
2
-55~+150
62.5
110
3.2
Unit
V
V
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
24-Mar-2017 Rev. B
Any changes of specification will not be informed individually.
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