SID9575_11 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SID9575
-15A , -60V , R_DS(ON) 90 mΩ
P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen-free
DESCRIPTION
The SID9575 provide the designer with the best
combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
TO-251
FEATURES
Simple Drive Requirement
Lower On-resistance
Fast Switching Characteristic
APPLICATION
The through-hole version (TO-251) is available for
low-profile applications and suited for low voltage
applications such as DC / DC converters.
MARKING:
9575
Date code
1
Gate
2
Drain
3
Source
A
B
C
D
GE
K
H
F
M
J
P
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
2.20 2.40
0.45 0.55
6.80 7.20
7.20 7.80
REF.
G
H
J
K
M
P
Millimeter
Min. Max.
5.40 5.80
0.90 1.50
2.30
0.60 0.90
0.50 0.70
0.45 0.60
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current¹
VGS=10V, TC=25°C
VGS=10V, TC=100°C
Total Power Dissipation @ TC = 25°C
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Linear Derating Factor
Operating Junction & Storage temperature
Symbol
VDS
VGS
ID
IDM
PD
RθJC
RθJA
TJ, TSTG
Ratings
-60
±25
-15
-9.5
-45
36
3.5
110
0.29
-55~150
Unit
V
V
A
A
A
W
°C / W
°C / W
W / °C
°C
http://www.SeCoSGmbH.com/
12-May-2011 Rev. B
Any changes of specification will not be informed individually.
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