SID9575 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SID9575
-15 A, -60 V, R_DS(ON) 90 mΩ
P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen-free
DESCRIPTION
The SID9575 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The through-hole version (TO-251) is available for low-profile applications and
suited for low voltage applications such as DC / DC converters.
FEATURES
z Simple Drive Requirement
z Lower On-resistance
z Fast Switching Characteristic
PACKAGE DIMENSIONS
MARKING:
9575
Date Code
G DS
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
7.20 7.80
2.30 REF
0.60 0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Operating Junction & Storage temperature
THERMAL DATA
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Symbol
R_θJC
R_θJA
Symbol
V_DS
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @ T_C = 25°C
T_J, T_STG
Ratings
-60
±25
-15
-9.5
-45
36
0.29
-55~150
Value
3.5
110
Unit
V
V
A
A
A
W
W / °C
°C
Unit
°C / W
°C / W
http://www.SeCoSGmbH.com/
01-June-2004 Rev. A
Any changes of specification will not be informed individually.
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