SID6679 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SID6679
-75A, -30V,RDS(ON)9m
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SID6679 provide the designer with the best combination of
fast switching, ruggerized device device design, low on-resistance
and cost -effectiveness.
The TO-251 is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
TO-251
6.6±0.2
5.3±0.2
2.3±0.1
0.5±0.05
5.6±0.2
7.0±0.2
Features
* Low On-Resistance
* Simple Drive Requirement
* Fast Switching Characteristic
7.0±0.2
1.2±0.3
0.75±0.15
0.6±0.1
G
2.3REF.
DS
0.5±0.1
D
Dimensions in millimeters
G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,VGS@10V
Continuous Drain Current,VGS@10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID@TC=25^oC
ID@TC=100 ^oC
IDM
PD@TC=25^oC
Tj, Tstg
Ratings
-30
± 25
-75
-50
-300
89
0.71
-55~+150
Unit
V
V
A
A
A
W
W / ^oC
o_C
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
ttp://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Max.
Max.
Symbol
Rthj-c
Rthj-a
Ratings
1.4
110
Unit
o_{C /W}
o_{C /W}
Any changing of specification will not be informed individual
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