SID3403 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SID3403
-10A, -30V,RDS(ON)200m
P-Channel Enhancement Mode Power Mos.FET
Description
RoHS Compliant Product
The SID3403 utilized advanced processing techniques to achieve
the lowest possible on-resistance, extremely efficient and cost-
effectiveness device.
The TO-251 is universally used for all commercial-industrial
applications.
5.6±0.2
Features
7.0±0.2
TO-251
6.6±0.2
5.3±0.2
2.3±0.1
0.5±0.05
7.0±0.2
1.2±0.3
0.75±0.15
* Low Gate Charge
* Simple Drive Requirement
* Fast Switching
0.6±0.1
G
2.3REF.
DS
0.5±0.1
Dimensions in millimeters
D
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
G
S
Symbol
VDS
VGS
ID@TC=25^oC
ID@TC=70^oC
IDM
PD@TC=25^oC
Tj, Tstg
Marking Code: 3403
XXXX(Date Code)
Ratings
-30
± 20
-10
-8.6
-48
36.7
0.29
-55~+150
Unit
V
V
A
A
A
W
W / ^oC
o_C
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
ttp://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Max.
Max.
Symbol
Rthj-c
Rthj-a
Ratings
3.4
110
Unit
o_{C /W}
o_{C /W}
Any changing of specification will not be informed individual
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