SID3055_15 Datasheet, PDF (1/6 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SID3055
15A, 30V,RDS(ON)80m
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The TO-251 is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
TO-251
6.6±0.2
5.3±0.2
2.3±0.1
0.5±0.05
5.6±0.2
7.0±0.2
7.0±0.2
1.2±0.3
0.75±0.15
0.6±0.1
G
2.3REF.
DS
0.5±0.1
Dimensions in millimeters
D
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,VGS@10V
Continuous Drain Current,VGS@10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
G
S
Marking Code: 3055
XXXX(Date Code)
Symbol
VDS
VGS
ID@TC=25^oC
ID@TC=100^oC
IDM
PD@TC=25^oC
Tj, Tstg
Ratings
30
± 20
15
9
50
28
0.22
-55~+150
Unit
V
V
A
A
A
W
W / ^oC
o_C
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Max.
Max.
Symbol
Rthj-c
Rthj-a
Ratings
4.5
62
Unit
o_{C /W}
o_{C /W}
Any changing of specification will not be informed individual
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