SID20N06-90I Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement MOSFET

Elektronische Bauelemente
SID20N06-90I
19A, 60V, R_DS(ON) 94 m
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The miniature surface mount MOSFETs utilize a high
cell density trench process to provide Low R_DS(on) and
to ensure minimal power loss and heat dissipation.
FEATURES
 Low R_DS(on) provides higher efficiency and extends
battery life.
 Miniature SC-59 surface mount package saves
board space.
 Fast switching speed.
 High performance trench technology.
APPLICATION
DC-DC converters, power management in portable and
battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
TO-251P
A
B
C
D
GE
K
H
F
M
J
P
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
2.20 2.40
0.40 0.60
6.80 7.20
4.00
REF.
G
H
J
K
M
P
Millimeter
Min. Max.
6.00 6.30
0.90 1.50
2.30
0.60 0.90
0.70 1.20
0.40 0.60
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ¹
T_C=25°C
Pulsed Drain Current ²
Continuous Source Current (Diode Conduction) ¹
Power Dissipation ¹
T_C=25°C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_STG
60
±20
19
40
30
50
-55 ~ 175
Thermal Resistance Data
Maximum Junction to Ambient ¹
R_θJA
50
Maximum Junction to Case
R_θJC
3
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
Unit
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
07-Apr-2011 Rev. A
Any changes of specification will not be informed individually.
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