SID15N10_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SID15N10
15A, 100V, R_DS(ON) 110mΩ
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SID15N10 provide the designer with the best
combination of fast switching. The TO-251 package is
universally preferred for all commercial-industrial
surface mount applications. The device is suited for
charger, industrial and consumer environment.
FEATURES
R_DS(on) ≦ 100mΩ @ V_GS = 10V
Super high density cell design for extremely low R_DS(on)
Exceptional on-resistance and maximum DC current
capability
MARKING
15N10
Date Code
PACKAGE INFORMATION
Package
MPQ
TO-251
2.5K
Leader Size
13’ inch
TO-251
A
B
C
D
GE
K
H
F
M
J
P
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
2.20 2.40
0.45 0.55
6.80 7.20
7.20 7.80
REF.
G
H
J
K
M
P
Millimeter
Min. Max.
5.40 5.80
0.90 1.50
2.30
0.60 0.90
0.50 0.70
0.45 0.60
2
Drain
1
Gate
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
±20
Continuous Drain Current
Pulsed Drain Current ¹
TC=25°C
ID
TC=70°C
IDM
15
13.8
24
Power Dissipation
TC=25°C
PD
TA=25°C
34.7
2
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 ~ 150
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-Ambient (PCB
mount) ³
RθJA
Maximum Thermal Resistance Junction-Case³
RθJC
62.5
3.6
3
Source
Unit
V
V
A
A
A
W
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
22-Apr-2013 Rev. A
Any changes of specification will not be informed individually.
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