SID05N10_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SID05N10
5A , 100V , R_DS(ON) 170 mΩ
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen-free
DESCRIPTION
The SID05N10 provide the designer with the best
combination of fast switching, The TO-251 package is
universally preferred for all commercial-industrial surface
mount applications. The device is suited for charger,
industrial and consumer environment.
TO-251
FEATURES
Low On-resistance
Fast Switching Speed
Low-voltage drive (4V)
Wide SOA (safe operating area)
Easily designed drive circuits
Easy to parallel
MARKING:
05N10
Date code
1
Gate
2
Drain
3
Source
A
B
C
D
GE
K
H
F
M
J
P
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
2.20 2.40
0.45 0.55
6.80 7.20
7.20 7.80
REF.
G
H
J
K
M
P
Millimeter
Min. Max.
5.40 5.80
0.90 1.50
2.30
0.60 0.90
0.50 0.70
0.45 0.60
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current¹
Total Power Dissipation @ TC = 25°C
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TC=25°C
TC=100°C
Linear Derating Factor
Operating Junction & Storage temperature
Symbol
VDS
VGS
ID
IDM
PD
RθJC
RθJA
TJ, TSTG
Ratings
100
±20
5
3.75
20
20
6.25
110
0.16
-55~150
Unit
V
V
A
A
A
W
°C / W
°C / W
W / °C
°C
http://www.SeCoSGmbH.com/
26-Dec-2011 Rev. A
Any changes of specification will not be informed individually.
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