SID01N60 Datasheet, PDF (1/5 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SID01N60
1.6A, 600V,RDS(ON)8
N-Channel Enhancement Mode Power Mos.FET
Description
RoHS Compliant Product
The SID01N60 provide the designer with the best combination
of fast switching.
The TO-251 is universally preferred for all commercial-industrial
surface mount applications and suited for AC/DC converters.
Features
* Dynamic dv/dt Rating
* Simple Drive Requirement
* Fast Switching
* Repetitive Avalanche Rated
TO-251
6.6±0.2
5.3±0.2
2.3±0.1
0.5±0.05
5.6±0.2
7.0±0.2
7.0±0.2
1.2±0.3
0.75±0.15
0.6±0.1
G
2.3REF.
DS
0.5±0.1
Dimensions in millimeters
D
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,VGS@10V
Continuous Drain Current,VGS@10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy²
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
G
S
Symbol
V DS
VGS
ID@TC=25^oC
ID@TC=100^oC
IDM
PD@TC=25^oC
EAS
I AR
EAR
Tj, Tstg
Max.
Max.
Symbol
Rthj-c
Rthj-a
Marking Code: 01N60
XXXX(Date Code)
Ratings
600
± 20
1.6
1
6
39
0.31
13
1.6
0.5
-55~+150
Unit
V
V
A
A
A
W
W / ^oC
mJ
A
mJ
o_C
Ratings
3.2
110
Unit
o_{C /W}
o_{C /W}
Any changing of specification will not be informed individual
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