SID01L60 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SID01L60
1A, 600V,RDS(ON)12
N-Channel Enhancement Mode Power Mos.FET
Description
The SID01L60 (through-hole version) is universally preferred for all
commercial-industrial surface mount applications and
suited for AC/DC converters.
Features
* RoHs Compliant
* Simple Drive Requirement
* Fast Switching Speed
* Repetitive Avalanche Rated
D
TO-251
6.6±0.2
5.3±0.2
2.3±0.1
0.5±0.05
5.6±0.2
7.0±0.2
7.0±0.2
1.2±0.3
0.75±0.15
0.6±0.1
G
2.3REF.
DS
0.5±0.1
Dimensions in millimeters
G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,VGS@10V
Continuous Drain Current,VGS@10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy²
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Symbol
V DS
VGS
ID@TC=25^oC
ID@TC=100^oC
IDM
PD@TC=25^oC
EAS
I AR
EAR
Tj, Tstg
Max.
Max.
Symbol
Rthj-c
Rthj-a
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Ratings
600
±30
1
0.8
3
29
0.232
0.5
1
0.5
-55~+150
Unit
V
V
A
A
A
W
W / ^oC
mJ
A
mJ
o_C
Ratings
4.3
110
Unit
o_{C /W}
o_{C /W}
Any changing of specification will not be informed individual
Page 1 of 4