SGM2501 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SGM2501
-2.6A, -20V,RDS(ON) 200m
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SGM2301 provides the designer with the best
combination of fast switching, low on-resistance
and cost-effectiveness. The SOT-89 package is
universally preferred for all commercial-industrial
surface mount applications and suited for low
voltage and battery power applications.
Features
* Surface Mount Device
* Simple Drive Requirement
D
G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current^1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5° TYP.
0.70 REF.
Symbol
VDS
VGS
ID@TA=25 ^oC
ID@TA=70 ^oC
IDM
PD@TA=25 ^oC
Tj, Tstg
Ratings
-20
±12
-2.6
-2.1
-10
1.5
0.012
-55~+150
Unit
V
V
A
A
A
W
W / ^oC
o_C
Thermal Data
Parameter
Thermal Resistance Junction-ambient³
Max.
Symbol
Rthj-a
Ratings
83.3
Unit
o_{C /W}
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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