SGM2310B_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SGM2310B
2.7A , 60V , R_DS(ON) 100 m
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SGM2310B utilized advanced processing
techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device. The
SGM2310B is universally used for all commercial-industrial
applications.
FEATURES
K
 Simple Drive Requirement
 Small Package Outline
F
MARKING
2310B

 = Date code
SOT-89
A
Top View _{C B}
4
L
E
123
D
GH
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
4.05 4.25
2.40 2.60
1.40 1.60
3.00 REF.
0.40 0.52
1.Gate
2.Drain
3.Source
J
REF.
G
H
J
K
L
Millimeter
Min. Max.
-
-
0.89 1.20
0.35 0.41
0.70 0.80
1.50 REF.
PACKAGE INFORMATION
Package
MPQ
SOT-89
3K
Leader Size
7 inch
TOP VIEW
D


G

S
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current ¹ , V_GS@10V
T_A=25°C
I_D
T_A=70°C
Pulsed Drain Current ²
I_DM
Power Dissipation ³
T_A=25°C
P_D
Linear Derating Factor
Operating Junction and Storage Temperature Range
T_j, T_stg
Maximum Junction to Ambient ¹
Thermal Resistance Rating
R_θJA
Ratings
60
±20
2.7
2.2
10
1.25
0.01
-55~150
100
Unit
V
V
A
A
W
°C / W
°C
°C / W
http://www.SeCoSGmbH.com/
04-Nov-2014 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 4