SGM2310B Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SGM2310B
2.7A , 60V , R_DS(ON) 100 mΩ
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SGM2310B utilized advanced processing
techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device. The
SGM2310B is universally used for all commercial-industrial
applications.
FEATURES
Simple Drive Requirement
Small Package Outline
MARKING
2310B
= Date code
PACKAGE INFORMATION
Package
MPQ
SOT-89
3K
Leader Size
7 inch
SOT-89
A
Top View _{C B}
4
K
L
E
123
D
F
GH
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
4.05 4.25
2.40 2.60
1.40 1.60
3.00 REF.
0.40 0.52
REF.
G
H
J
K
L
Millimeter
Min. Max.
-
-
0.89 1.20
0.35 0.41
0.70 0.80
1.50 REF.
TOP VIEW
D
24
1
G
3
S
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current ¹ , VGS@10V
TA=25°C
ID
TA=70°C
Pulsed Drain Current ²
IDM
Power Dissipation ³
TA=25°C
PD
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
Thermal Resistance Rating
Maximum Junction to Ambient ¹
RθJA
Ratings
60
±20
2.7
2.2
10
1.25
0.01
-55~150
100
Unit
V
V
A
A
W
°C / W
°C
°C / W
http://www.SeCoSGmbH.com/
20-Feb-2013 Rev. A
Any changes of specification will not be informed individually.
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