SGM2310A Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SGM2310A
5 A, 60 V, R_DS(ON) 115 mΩ
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-89
DESCRIPTION
The SGM2310A utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient
and cost-effectiveness device. The SGM2310A is universally
used for all commercial-industrial applications.
FEATURES
Simple drive requirement
Super high density cell design for extremely low R_DS(ON)
D
MARKING
24
A
Top View _{C B}
4
K
L
E
123
D
F
GH
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
4.05 4.25
2.40 2.60
1.40 1.60
3.00 REF.
0.40 0.52
REF.
G
H
J
K
L
Millimeter
Min. Max.
-
-
0.89 1.20
0.35 0.41
0.70 0.80
1.50 REF.
2310A
= Date code
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current^1,2
Power Dissipation
Linear Derating Factor
Operating Junction & Storage Temperature
THERMAL DATA
PARAMETER
Thermal Resistance Junction-Ambient³(Max).
1
G
3
S
SYMBOL
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @ TA = 25°C
TJ, TSTG
SYMBOL
RθJA
RATINGS
60
±20
5.0
4.0
10
1.5
0.01
-55~150
VALUE
83.3
UNIT
V
V
A
A
A
W
W / °C
°C
UNIT
°C / W
http://www.SeCoSGmbH.com/
16-Dec-2009 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4