SGM2308 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SGM2308
3A, 60V,RDS(ON) 160m
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SGM2308 utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SGM2308 is universally used for all commercial-
industrial surface mount applications.
Features
* Simple Drive Requirement
* Small Package Outline
D
G
S
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5° TYP.
0.70 REF.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³, VGS @4.5V
Continuous Drain Current,³ VGS @4.5V
Pulsed Drain Current^1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID@TA=25^oC
ID@TA=70 ^oC
IDM
PD@TA=25^oC
Tj, Tstg
Ratings
60
±20
3.0
2.3
10
1.5
0.01
-55~+150
Unit
V
V
A
A
A
W
W / ^oC
o_C
Thermal Data
Parameter
Thermal Resistance Junction-ambient³
Max.
Symbol
Rthj-a
Ratings
83.3
Unit
o_C/W
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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