SGM1N25E Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SGM1N25E
1A, 250V, R_DS(ON) 1.78Ω
N-Channel Enhancement Mode MOSFET
FEATURES
Low Gate Charge
Simple Drive Requirement
Green Device Available
ESD susceptibility 2KV
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
MARKING
SOT-89
4
123
A
E
C
PACKAGE INFORMATION
Package
MPQ
SOT-89
3K
Leader Size
7 inch
B
F
G
H
J
D
K
L
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.30 4.70
3.94 4.40
1.30 1.70
2.25 2.70
1.50 1.85
0.89 1.20
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.40 0.58
1.50 TYP
3.00 TYP
0.32 0.52
0.35 0.46
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current@ VGS=10V ¹
TA=25°C
ID
TA=70°C
Pulsed Drain Current ²
IDM
Total Power Dissipation ³
TA=25°C
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Resistance Rating
Thermal Resistance from Junction to Ambient ¹
RθJA
Rating
250
±20
1
0.8
4
3.5
-55~150
35
Unit
V
V
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
07-Jul-2015 Rev. A
Any changes of specification will not be informed individually.
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