SGM161 Datasheet, PDF (1/5 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SGM161
5.3A, 20V,RDS(ON)50m
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOT-89
Description
The SGM161 utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
Features
* Low On-Resistance
* Capable Of 2.5V Gate Drive
* Reliable And Rugged
Applications
* Notebook PC
* Li-ion Battery Systems
* On-Board Power Supplies
* Cellular And Portable Phones
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
D
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5° TYP.
0.70 REF.
G
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,³ VGS@4.5V
Continuous Drain Current,³ VGS@4.5V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
S
Symbol
VDS
VGS
ID@TA=25 ^oC
ID@TA=70 ^oC
IDM
PD@TA=25 ^oC
Tj, Tstg
Ratings
20
±12
5.3
4.3
10
2
0.01
-55~+150
Unit
V
V
A
A
A
W
W / ^oC
o_C
Thermal Data
Parameter
Thermal Resistance Junction-ambient ³
Max.
Symbol
Rthj-a
Ratings
90
Unit
o_{C /W}
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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