SGM0410S Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SGM0410S
2.2A , 100V , R_DS(ON) 310 mΩ
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SGM0410S provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SOT-89 package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
MARKING
0410S
= Date code
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size
7 inch
SOT-89
A
Top View _{C B}
4
K
L
E
123
D
F
GH
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
4.05 4.25
2.40 2.60
1.40 1.60
3.00 REF.
0.40 0.52
REF.
G
H
J
K
L
Millimeter
Min. Max.
-
-
0.89 1.20
0.35 0.41
0.70 0.80
1.50 REF.
D
24
1
G
3
S
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
±20
Continuous Drain Current ¹@VGS=10V ^TA=25°C
ID
2.2
TA=70°C
1.7
Pulsed Drain Current ²
IDM
5.5
Power Dissipation ³
TA=25°C
PD
1.5
Operating Junction & Storage Temperature
TJ, TSTG
-55~150
Thermal Resistance Rating
Thermal Resistance Junction-Ambient¹(Max).
RθJA
85
Thermal Resistance Junction-Case¹(Max).
RθJC
36
Unit
V
V
A
A
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
28-Sep-2012 Rev.A
Any changes of specification will not be informed individually.
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