SGM0410 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – 3.5A , 100V , RDS(ON) 170 m
N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SGM0410
3.5A , 100V , R_DS(ON) 170 mΩ
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SGM0410 provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SOT-89 package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
MARKING
0410
= Date code
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size
7 inch
SOT-89
A
Top View _{C B}
4
K
L
E
123
D
F
GH
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
4.05 4.25
2.40 2.60
1.40 1.60
3.00 REF.
0.40 0.52
REF.
G
H
J
K
L
Millimeter
Min. Max.
-
-
0.89 1.20
0.35 0.41
0.70 0.80
1.50 REF.
D
24
1
G
3
S
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous DrainCurrent³@
VGS=5V, TA=25°C
ID
VGS=5V, TA=70°C
Pulsed Drain Current^1,2
IDM
Power Dissipation
TA=25°C
PD
Linear Derating Factor
Operating Junction & Storage Temperature
TJ, TSTG
Thermal Resistance Rating
Thermal Resistance Junction-Ambient³(Max).
R_θJA
Rating
100
±20
3.5
2.2
10
2
0.016
-55~150
62.5
Unit
V
V
A
A
A
W
W / °C
°C
°C / W
http://www.SeCoSGmbH.com/
3-Nov-2011 Rev. A
Any changes of specification will not be informed individually.
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