SGE2329S_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SGE2329S
-1.5A, -100V, R_DS(ON) 650mΩ
P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SGE2329S uses advanced trench technology to
provide excellent on-resistance extremely efficient and
cost-effectiveness device. The through-hole version
is available for low-profile applications and suited for low
voltage applications such as DC/DC converters.
FEATURES
High Density Cell Design for Ultra Low On-Resistance
High power and Current handling capability
Excellent CdV/dt effect decline
100% EAS and 100% Rg Guaranteed
Green Device Available
TO-220
B
N
D
E
MA
O
P
H
JC
K
G
L
L
F
PACKAGE CODE
D
2329S
= Marking
GDS
REF.
A
B
C
D
E
F
G
H
Millimeter
Min. Max.
14.22 16.51
9.65 10.67
12.50 14.75
3.56 4.90
0.51 1.45
2.03 2.92
0.31 0.76
3.5
4.5
REF.
J
K
L
M
N
O
P
Millimeter
Min. Max.
0.7 1.78
0.38 1.02
2.39 2.69
2.50 3.43
3.10 4.09
8.38 9.65
0.89 1.47
P-Channel
D2
G1
S3
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current, VGS@10V¹
TA=25°C
ID
TA=70°C
Pulsed Drain Current²
IDM
Total Power Dissipation³
TA=25°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Junction-ambient¹
Thermal Resistance Ratings
Max.
RθJA
Ratings
-100
±20
-1.5
-1.2
-5.5
2
-55 ~ +150
62.5
Unit
V
V
A
A
A
W
°C
°C/W
http://www.SeCoSGmbH.com/
23-Sep-2014 Rev. A
Any changes of specification will not be informed individually.
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