SFG20SD50F Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Voltage 50V ~ 600V 20.0 Amp Super Fast Rectifier

Elektronische Bauelemente
SFG20SD50F ~ SFG20SD600F
Voltage 50V ~ 600V
20.0 Amp Super Fast Rectifier
RoHS Compliant Product
A suffix of “-C” specifies and halogen free
FEATURES
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
MECHANICAL DATA
Case：Molded plastic ITO-220Y
Epoxy：UL 94V-0 rate flame retardant
Terminals：Solderable per MIL-STD-202
method 208
Polarity：Color band denotes cathode
Mounting position：Any
Weight：1.81 grams
1
3
ITO-220Y
B
N
D
E
MA
H
C
K
G
L
L
F
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A
14.80 15.20
G
0.30 0.70
B
9.50 10.50
H
3.50 3.41
2
C
12.40 14.30
K
D
4.30 4.70
L
0.50 0.65
2.35 2.70
E
2.80 3.20
M
2.50 2.80
F
2.40 2.90
N
φ 3.2 φ 3.6
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Parameters
Symbol
SFG
SFG
20SD50F 20SD100F
Part Number
SFG
SFG
20SD200F 20SD300F
SFG
20SD400F
SFG
20SD600F
Unit
Maximum Recurrent Peak Reverse
Voltage
VRRM
50
100
200
300
400
600
V
Maximum RMS Voltage
VRMS
35
70
140
210
280
420
V
Maximum DC Blocking Voltage
VDC
50
100
200
300
400
600
V
Maximum Average Forward Rectified
Current TC=125°C
IF(AV)
20
A
Peak Forward Surge Current,8.3ms
single Half sine-wave superimposed
IFSM
200
on rated load (JEDEC method)
175
A
Maximum Instantaneous Forward
Voltage @ 10.0A
VF
0.975
1.3
1.5
V
Maximum DC Reverse
Current
TJ=25°C
At Rated DC Blocking
IR
Voltage
TJ=125°C
Maximum Reverse Recovery Time¹
TRR
35
Typical Junction Capacitance²
CJ
120
Operating Junction and Storage
Temperature Range
TJ, TSTG
Notes：
1. Reverse recovery test conditions IF= 0.5A, IR= 1.0A, IRR= 0.25A.
http:/2/w.wwM.SeeCaosSuGrmebdHa.ctom1./0 MHz and applied reverse voltage of 4.0 Volts DC.
3. Thermal Resistance junction to case.
10
µA
250
50
nS
70
pF
-55~150
°C
Any changes of specification will not be informed individually.
09-May-2011 Rev. A
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