SEF207B Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Voltage 1000 V 2.0 Amp High Efficiency Recovery Rectifiers

Elektronische Bauelemente
SEF207B
Voltage 1000 V
2.0 Amp High Efficiency Recovery Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Glass passivated chip
SMB
B
A
C
MECHANICAL DATA
Case: Molded plastic SMB/DO-214AA
Epoxy：UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-750 method 2026
Polarity：Color band denotes cathode
Mounting position：Any
Weight: 0.093 grams
PACKAGE INFORMATION
Package
MPQ
SMB
3K
Leader Size
13’ inch
H
D
GE
F
REF.
A
B
C
D
Millimeter
Min. Max.
1.91 2.20
4.06 4.70
3.30 3.94
2.13 2.44
REF.
E
F
G
H
Millimeter
Min. Max.
-
0.203
5.08 5.59
0.76 1.52
0.15 0.305
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Parameter
Symbol
Rating
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current @TA=90°C
Peak Forward Surge Current, 8.3ms single half
sine-wave superimposed on rated load(JEDEC method)
Maximum Instantaneous Forward Voltage @ 2.0A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time ¹
Typical Junction Capacitance ²
Typical Thermal Resistance ³
TJ=25°C
TJ=125°C
Operating & Storage Temperature
Notes:
1. Reverse recovery test condition：IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3. Thermal Resistance junction to ambient.
VRRM
VRMS
VDC
IF
IFSM
VF
IR
TRR
CJ
RθJA
TJ,TSTG
1000
700
1000
2.0
60
1.7
5.0
100
75
50
55
-55~ 150
Unit
V
V
V
A
A
V
µA
nS
pF
°C/W
°C
http://www.SeCoSGmbH.com/
17-Aug-2011 Rev. A
Any changes of specification will not be informed individually.
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