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SEF201AM Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Voltage 50 ~ 1000 V 2.0 Amp High Efficiency Recovery Rectifiers
Elektronische Bauelemente
SEF201AM~SEF207AM
Voltage 50 ~ 1000 V
2.0 Amp High Efficiency Recovery Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low profile package
Glass Passivated Chip Juntion
Low reverse current
Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
Case : SMAM
Terminals: Solderable per MIL-STD-750, Method 2026
Weight: 27 mgram (Approximate)
SMAM
MARKING
Part Number
SEF201AM
SEF202AM
SEF203AM
SEF204AM
Marking Code
US2A
US2B
US2D
US2G
Part Number
SEF205AM
SEF206AM
SEF207AM
Marking Code
US2J
US2K
US2M
REF.
A
B
C
Millimeter
Min. Max.
3.30 3.70
2.40 2.70
4.40 4.90
REF.
D
E
F
Millimeter
Min. Max.
0.80 1.20
1.30 1.60
0.90 1.10
PACKAGE INFORMATION
Package
MPQ
SMAM
3K
Leader Size
7 inch
ABSOLUTE MAXIMUM RATINGS
(Rating 25°C ambient temperature unless otherwise s pecified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Parameter
Symbol
SEF
201AM
SEF
202AM
Part Number
SEF
SEF
SEF
203AM 204AM 205AM
SEF
206AM
Maximum Repetitive Peak Reverse Voltage
VRRM
50
100
200
400
600 800
SEF
207AM
1000
Unit
V
Maximum RMS Voltage
VRMS
35
70
140
280 420 560 700
V
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Rectified
Current
IF
Peak Forward Surge Current, 8.3ms single
half sine-wave superimposed on rated load
IFSM
Maximum Instantaneous Forward Voltage
IF=2A @ 25°C
VF
Maximum DC Reverse Current TA=25°C
at Rated DC Blocking Voltage TA=125°C
IR
Maximum Reverse Recovery Time 1
TRR
Typical Thermal Resistance 2
RθJL
Typical Thermal Resistance 2
RθJC
50
100
200
400 600 800 1000 V
2
A
50
A
1.0
1.4
5
100
50
22
30
1.7
V
µA
75
nS
°C/W
°C/W
Operating & Storage Temperature
TJ,TSTG
Notes:
1. Measured with IF=0.5A,IR=1A,IRR=0.25A
2. P.C.B. mounted with10 X 10 x 0.2 mm copper pad areas.
http://www.SeCoSGmbH.com/
17-Apr-2015 Rev. A
-55~ 150
°C
Any changes of specification will not be informed individually.
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