SEF112B Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – 1.0 A High Voltage Ultrafast Rectif

Elektronische Bauelemente
SEF112B
VOLTAGE 1200 V
1.0 A High Voltage Ultrafast Rectifier
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 High Current Capability
 Extremely Low Thermal Resistance
 For Surface Mount Application
 Higher Temp Soldering : 250°C for 10 Seconds at Terminals
 Low Revise Current
MECHANICAL DATA
 Case: Molded Plastic
 Epoxy: UL 94V-0 Rate Flame Retardant
 Polarity: Color Band Denotes Cathode End
 Mounting Position: Any
DO-214AA (SMB)
.083(2.11)
.075(1.91)
.096(2.44)
.083(2.13)
.050(1.27)
.030(0.76)
.185(4.70)
.160(4.06)
.155(3.94)
.130(3.30)
.012(0.31)
.006(0.15)
(..020083)MAX.
.220(5.59)
.200(5.08)
Dimens ions in inches and (millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25°C ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
TYPE NUMBER
SYMBOL
SEF112B
Repetitive Peak reverse voltage
RMS Voltage
V_RRM
V_RMS
1200
850
Average Forward Current @T_J=25°C
I_F(AV)
1
Peak Forward Current @ 8.3 ms, single half sine wave
I_FSM
25
Maximum Instantaneous Forward Voltage
V_F @ I_F = 1.0 A, T_A = 25°C
V_F @ I_F = 1.0 A, T_A = 125°C
V_F
1.9 ( Typ. 1.6 )
1.6 ( Typ. 1.2 )
Maximum Reverse Current
At V_R=1200 V @ T_J = 25°C
At V_R=1200V @ T_J = 125°C
I_R
5
50
Typical Junction Capacitance (Note 1)
C_J
4.5
Typical Thermal Resistance (Note 2)
RθJA
80
Reverse recovery time I_F = 0.5 A, I_RR= 0.25 A, I_R =1A
T_RR
75 ( Typ. 60 )
Operating Temperature Range
T_J
-50 ~ + 175
Storage temperature
T_STG
-65 ~ + 175
NOTES:
1. Measured at 1MHz and applied reverse voltage of 5.0 V D.C.
2. Thermal Resistance Junction to Ambient. Printed circuit board FR4 copper pad 1×1cm, 35um thickness
UNITS
V
A
A
V
μA
pF
°C/W
nS
°C
°C
http://www.SeCoSGmbH.com/
01-June-2002 Rev. A
Any changes of specification will not be informed individually.
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