SDT517 Datasheet, PDF (1/5 Pages) SeCoS Halbleitertechnologie GmbH – N & P-Ch Enhancement Mode MOSFET

Elektronische Bauelemente
SDT517
N & P-Ch Enhancement Mode MOSFET
N-Ch: 6A, 12V, R_DS(ON) 24 mΩ
P-Ch: -4.1A, -12V, R_DS(ON) 45 mΩ
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
FEATURES
Surface Mount Package
Super High Density Cell Design for
Extremely Low RDS(ON)
Exceptional On-resistance and
Maximum DC Current Capability
DFN2x2-6L-J
APPLICATIONS
Power Management In Note Book
Portable Equipment
DC/DC Converter
Load Switch
MARKING
517
Date Code
PACKAGE INFORMATION
Package
MPQ
DFN2×2-6L-J
3K
Leader Size
7 inch
REF.
A
B
C
D
E
F
Millimeter
Min. Typ. Max.
2.00 BSC.
2.00 BSC.
0.675 0.75
0.80
0.30 Typ.
0.75 0.86 1.1
0.65BSC
REF.
G
H
J
K
L
P
Millimeter
Min. Typ. Max.
0.30 BSC
0.20 BSC
0
--
0.06
0.15 0.20 0.25
0.20 0.30 0.38
0.52 0.65 0.72
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current ¹
ID
Pulsed Drain Current(tp=10us)
IDM
Continous Source-Drain Diode Current
IS
Lead Temperature for Soldering Purposes
(1/8’’ from case for 10 s)
TL
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Maximum Thermal Resistance from Junction to Ambient ¹
RθJA
N-ch
12
±12
6
24
6
Rating
P-ch
-12
±12
-4.1
-16.4
-4.1
260
150, -55~150
167
Unit
V
V
A
A
A
°C
°C
°C / W
http://www.SeCoSGmbH.com/
12-Sep-2017 Rev. B
Any changes of specification will not be informed individually.
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