SDT3N03 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – 3.5A, 30V, RDS(ON) 55 m
(ohm) Dual-N Enhancement Mode MOSFET

Elektronische Bauelemente
SDT3N03
3.5A, 30V, R_DS(ON) 55 mΩ
Dual-N Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
FEATURES
Low RDS_(on) trench technology
Low thermal impedance
Fast switching speed
DFN2x2-6L-J
APPLICATIONS
Battery-powered instruments
Portable Computing
Mobile Phones
GPS Units and Media Players
PACKAGE INFORMATION
Package
MPQ
DFN2×2-6L-J
3K
Leader Size
7 inch
REF.
A
B
C
D
E
F
Millimeter
Min. Typ. Max.
2.00 BSC.
2.00 BSC.
0.675 0.75
0.80
0.30 Typ.
0.75 0.86 1.1
0.65BSC
REF.
G
H
J
K
L
P
Millimeter
Min. Typ. Max.
0.30 BSC
0.20 BSC
0
-- 0.06
0.15 0.20 0.25
0.20 0.30 0.38
0.52 0.65 0.72
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current @VGS=10V ¹
TA=25°C
ID
TA=70°C
Pulsed Drain Current ²
IDM
Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Maximum Thermal Resistance from
Junction to Ambient ¹
t≦5 sec
RθJA
Steady State
Rating
30
±20
3.5
2.8
14
1.5
-55~150
83
125
Unit
V
V
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
12-Sep-2017 Rev. B
Any changes of specification will not be informed individually.
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