SDT3A5N06-C Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – 3.5A, 60V, RDS(on) 100 m
(ohm) N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SDT3A5 06-C
3.5A, 60V, R_{DS(O )} 100 mΩ
-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SDT3A5N06-C is the highest performance trench
N-ch MOSFETs with extreme high cell density,
which provide excellent R_DSON and gate charge
for most of the synchronous buck converter applications.
The SDT3A5N06-C meet the RoHS and Green Product
requirement with full function reliability approved.
FEATURES
Advanced high cell density Trench technology
Super Low Gate Charge
Green Device Available
MARKING
3A5N06
.
= Date code
PACKAGE INFORMATION
Package
MPQ
DFN2×2-6J
3K
Leader Size
7 inch
DFN2x2-6J
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
1.924 2.076
1.924 2.076
0.46 0.66
0.65 TYP.
0.20 0.40
0.80 1.00
0.174 0.326
REF.
H
I
J
K
L
M
Millimeter
Min. Max.
0.20
-
0.85 1.05
0.70 0.90
0.20 0.40
0.203REF
0.00 0.05
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current @VGS=10V ¹
TA=25°C
ID
TA=70°C
Pulsed Drain Current ³
IDM
Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Thermal Resistance from Junction to Ambient ¹
RθJA
Thermal Resistance from Junction to Ambient ²
Rating
60
±20
3.5
2.8
14
2
-55~150
t≦10sec , 62.5
Steady State , 100
250
Unit
V
V
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
22-Jun-2017 Rev. A
Any changes of specification will not be informed individually.
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