SDT3005 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SDT3005
5A, 30V, R_DS(ON) 42 mΩ
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SDT3005 provides designers with the best
combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
DFN2*2-6J package is universally preferred for
all commercial-industrial surface mount applications
and suited for low voltage applications such as
DC/DC converters.
DFN2*2-6J
FEATURES
TrenchFET power MOSFET
Low R_DS(on)
Typical ESD protection
APPICTIONS
Load switch and battery protection
MARKING
3005
PACKAGE INFORMATION
Package
MPQ
DFN2*2-6J
3K
Leader Size
7 inch
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
1.924 2.076
1.924 2.076
0.46 0.66
0.65 TYP.
0.20 0.40
0.80 1.00
0.174 0.326
REF.
H
I
J
K
L
M
Millimeter
Min. Max.
0.20
-
0.85 1.05
0.70 0.90
0.20 0.40
0.203REF
0.00 0.05
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ¹
Thermal Resistance from Junction to Ambient
Operating Junction and Storage Temperature
VDS
VGS
ID
IDM
RθJA
TJ, TSTG
Rating
30
±10
5
20
250
150, -55~150
Unit
V
V
A
A
°C / W
°C
http://www.SeCoSGmbH.com/
01-Jul-2016 Rev. A
Any changes of specification will not be informed individually.
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