SDT2P02 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – -2.2A, -20V, RDS(ON) 200 m
(ohm) Dual-P Enhancement Mode MOSFET

Elektronische Bauelemente
SDT2P02
-2.2A, -20V, R_DS(ON) 200 mΩ
Dual-P Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low R_DS(on)
and to assure minimal power loss and heat dissipation.
DFN2x2-6L-J
FEATURES
Low R_DS(on) trench technology
Low thermal impedance
Fast switching speed
APPLICATIONS
Battery-powered instruments
Portable computing
Mobile phones
GPS units and media players
PACKAGE INFORMATION
Package
MPQ
DFN2×2-6L-J
3K
Leader Size
7 inch
REF.
A
B
C
D
E
F
Millimeter
Min. Typ. Max.
2.00 BSC.
2.00 BSC.
0.675 0.75 0.80
0.30 Typ.
0.75 0.86
1.1
0.65BSC
REF.
G
H
J
K
L
P
Millimeter
Min. Typ. Max.
0.30 BSC
0.20 BSC
0
--
0.06
0.15 0.20 0.25
0.20 0.30 0.38
0.52 0.65 0.72
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current@ VGS= -4.5V ¹
TA=25°C
ID
TA=70°C
Pulsed Drain Current ²
IDM
Power Dissipation@ TA=25°C ¹
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Maximum Thermal Resistance from
Junction to Ambient ¹
t≦5 sec
RθJA
Steady State
Rating
-20
±8
-2.2
-1.7
-8.8
1.5
-55~150
83
125
Unit
V
V
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
12-Aug-2017 Rev. D
Any changes of specification will not be informed individually.
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