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| SDT1216_15 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power MOSFET | |||
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Elektronische Bauelemente
SDT1216
-16A , -12V , RDS(ON) 21 mâ¦
P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
DESCRIPTION
The SDT1216 provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The DFN2*2-6J package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
DFN2*2-6J
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
MARKING
1216
PACKAGE INFORMATION
Package
MPQ
DFN2*2-6L
3K
Leader Size
7 inch
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
1.924 2.076
1.924 2.076
0.46 0.66
0.65 TYP.
0.20 0.40
0.80 1.00
0.174 0.326
REF.
H
I
J
K
L
M
Millimeter
Min. Max.
0.20
-
0.85 1.05
0.70 0.90
0.20 0.40
0.203REF
0.00 0.05
Top View
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
-12
Gate-Source Voltage
VGS
±8
Continuous Drain Current (tâ¤10s)
ID
-16
Pulsed Drain Current 1
IDM
-65
Power Dissipation@ TA = 25°C 2
Maximum Power Dissipation @TC= 25°C 3
2.5
PD
18
Thermal Resistance Junction-Ambient 4
RθJA
50
Thermal Resistance from Junction to Case 4
RθJC
6.9
Operating Junction & Storage Temperature
TJ, TSTG
150, -55~150
Unit
V
V
A
A
W
°C / W
°C / W
°C
http://www.SeCoSGmbH.com/
28-Jul-2014 Rev.A
Any changes of specification will not be informed individually.
Page 1 of 3
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