SDN520C Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch: 4.5 A, 20 V, RDS(ON) 58 m
P-Ch: -4.5 A, -20 V, RDS(ON) 112 m
N & P-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SDN520C
N-Ch: 4.5 A, 20 V, R_DS(ON) 58 mΩ
P-Ch: -4.5 A, -20 V, R_DS(ON) 112 mΩ
N & P-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a
high cell Density trench process to provide low R_DS(on)
and to assures minimal power loss and heat dissipation.
FEATURES
Low R_DS(on) provides higher efficiency and extends
battery life.
Low thermal impedance copper leadframe DFN2X2_6L
saves board space.
Fast switching speed.
High performance trench technology.
APPLICATION
DC-DC converters and power management
in portable and battery-powered products such
as computers, printers, PCMCIA cards, cellular
and cordless telephones.
DFN2x2-6L
REF.
A
B
C
D
E
F
Millimeter
Min. Typ. Max.
2.00 BSC.
2.00 BSC.
0.675 0.75 0.80
0.25 0.30 0.35
0.81 0.86 0.91
0.65BSC
REF.
G
H
J
K
L
P
Millimeter
Min. Typ. Max.
0.23 0.30 0.38
0.65BSC
0
--
0.05
0.15 0.20 0.25
0.25 0.30 0.35
0.60 0.65 0.70
TOP VIEW
ABSOLUTE MAXIMUM RATINGS(T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
N-Channel
P-Channel
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current ¹
TA=25℃
TA=70℃
ID
Pulsed Drain Current ²
IDM
Continuous Source Current (Diode Conduction) ¹
IS
Power Dissipation ¹
TA=25℃
TA=70℃
PD
20
-20
±8
±8
4.5
-4.5
4.5
-4.5
8
-8
4.5
-4.5
6.5
5
Operating Junction and Storage Temperature Range
TJ, Tstg
Thermal Resistance Rating
-55 ~ +150
Parameter
Symbol
Typ
Max
Maximum Junction to Ambient ¹
t ≦ 5 sec
Steady State
R_θJA
52
65
12.5
16
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
Unit
V
V
A
A
A
W
℃
Unit
℃/W
http://www.SeCoSGmbH.com/
4-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
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