SDG5521C Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – N & P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SDG5521C
N-Ch: 5A, 20V, R_DS(ON) 58 mΩ
P-Ch: -4.7A, -20V, R_DS(ON) 77 mΩ
N & P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low R_DS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
DFN2*3
FEATURES
Low R_DS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe DFN2*3
saves board space.
Fast switching speed.
High performance trench technology.
PACKAGE INFORMATION
Package
MPQ
DFN2*3
3K
Leader Size
13’ inch
REF.
A
B
C
D
E
Millimeter
Min. Max.
3.00 BSC.
1.70 BSC.
0.70 0.90
0.65 BSC.
0.08 0.25
REF.
F
G
H
I
Millimeter
Min. Max.
0.24 0.35
2.00 BSC.
0.20 0.40
0
0.15
Top View
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
N-CH
P-CH
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current ¹
TA = 25°C
ID
TA = 70°C
Pulsed Drain Current ²
IDM
Continuous Source Current (Diode Conduction) ¹
IS
Total Power Dissipation ¹
TA = 25°C
PD
TA = 70°C
Operating Junction & Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Maximum Junction-to-Ambient ^{1 t≦10 sec}
RθJA
Steady State
Notes:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
20
-20
±8
±8
5
-4.7
4.1
-3.9
8
-8
4.5
-4.5
2.1
1.3
-55 ~ 150
62.5
80
Unit
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
03-May-2013 Rev. A
Any changes of specification will not be informed individually.
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