SDF920NE Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – Dual N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SDF920NE
11A, 20V, R_DS(ON) 22 m
Dual N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide low
R_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,.
printers, PCMCIA cards, cellular and cordless
telephones
FEATURES
 Low R_DS(on) provides higher efficiency and extends
battery life.
 Low thermal impedance copper leadframe DFN2x5
saves board space
 Fast switching speed
 High performance trench technology
PACKAGE INFORMATION
Package
MPQ
DFN2x5
5K
Leader Size
13’ inch
DFN2x5
E
H
F
N
I
J
D
G
C
B
A
L
O
K
M
2KV
REF.
A
B
C
D
E
F
G
H
Millimeter
Min. Max.
0.70 0.80
0.00 0.06
0.10 0.20
0°
12°
5.00 BSC
4.50 BSC
0.50 BSC
0.20 0.30
REF.
I
J
K
L
M
N
O
Millimeter
Min. Max.
2.00 BSC
1.30 1.55
2.60 2.86
1.67 BSC
0.15 BSC
0.40 0.60
0.00 0.10
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ¹
T_A = 25°C
T_A = 70°C
Pulsed Drain Current ²
Continuous Source Current (Diode Conduction) ¹
Total Power Dissipation ¹
T_A = 25°C
T_A = 70°C
Operating Junction & Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_STG
Thermal Resistance Ratings
Maximum Junction-to-Ambient ¹
t≦10 sec
Steady State
R_θJA
Notes
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
20-Apr-2011 Rev. A
Value
20
±12
11
8.5
±40
3.1
3.5
1.8
-55~150
36
76
Unit
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
Any changes of specification will not be informed individually.
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