SCS751DS_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Plastic-Encapsulate Schottky Diodes

Elektronische Bauelemente
SCS751DS
30 mA, 40 V
Plastic-Encapsulate Schottky Diodes
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
Silicon epitaxial planar
FEATURES
Small surface mounting type
Low reverse current and low forward voltage
High reliability
DFNWB
APPLICATION
High speed switching For Detection
For portable equipment: (i.e. Mobile phone, MP3, MD, CD-ROM,
DVD-ROM, Note book PC, etc)
REF.
A
B
C
D
Millimeter
Min. Max.
0.55 0.65
0.95 1.05-
0.4
0.5
0
0.05
REF.
E
F
G
H
Millimeter
Min. Max.
0.15 0.35
0.05REF
0.4
0.6
0.65TYP
MARKING :
Cathode ^-
5 +_Anode
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS at T_A = 25°C
PARAMETER
SYMBOL
RATINGS
Peak Reverse Voltage
DC Reverse Voltage
Mean Rectifying Current
Peak Forward Surge Current
Junction, Storage Temperature
VRM
VR
Io
IFSM
TJ, TSTG
40
30
30
150
+125, -40 ~ +125
UNIT
V
V
mA
mA
°C
ELECTRICAL RATING at T_A = 25°C
PARAMETERS
Forward Voltage
Reverse Current
Capacitance between terminals
SYMBOL
VF
IR
CT
MIN.
TYP.
2
MAX.
0.37
0.5
UNIT TEST CONDITIONS
V IF = 1mA
µA VR = 30V
pF VR = 30V, f = 1MHZ
http://www.SeCoSGmbH.com/
10-Nov-2009 Rev. A
Any changes of specification will not be informed individually.
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