SCS70DSTN Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – Silicon Epitaxial Planar Schottky Barrier Rectifiers

Elektronische Bauelemente
SCS70DSTN
0.07 A, 70 V
Silicon Epitaxial Planar Schottky Barrier Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
Planar Schottky barrier diode with an integrated guard ring
for stress protection
FEATURES
● Low diode capacitance
● Low forward voltage
● Guard ring protected
● High breakdown voltage
APPLICATION
● Ultra high-speed switching
● Voltage clamping
● Mobile communication ,digital (still) cameras ,
PDAs and PCMCIA cards
MARKING
S5
WBFBP-02C
LC
D
J
M
H
M
B
EF
G
A
K
 _
REF.
A
B
C
D
E
F
Millimeter
Min.
0.950
0.550
0.450
Max.
1.050
0.650
0.550
0.450 REF.
0.400 REF.
0.275 0.325
REF.
G
H
J
K
L
M
Millimeter
Min.
0.275
0.275
0.275
Max.
0.325
0.325
0.325
0.675 0.725
0.010 0.070
0.010 REF.
PACKAGE INFORMATION
Package
MPQ
WBFBP-02C
10K
Leader Size
7 inch
MAXIMUM RATINGS CHARACTERISTICS(T_A=25°C unless otherwise specified)
Parameter
DC reverse voltage
Forward continuous current
Peak forward surge current @ Tp< 10ms
Power Dissipation
Thermal resistance junction to ambient
Junction, Storage Temperature Range
Symbol
V_R
I_F
I_FSM
P_d
R_θJA
T_J, T_STG
Limits
70
70
100
250
400
125, -55 ~ 150
Unit
V
mA
mA
mW
℃/W
℃
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameters
Forward Voltage
Symbol
V_F
Min.
-
-
-
Typ.
-
-
-
Reverse Current¹
-
-
I_R
-
-
Diode capacitance
C_d
-
2
Note:
1. Pulse Test: Pulse width=300μs;Duty cycle=0.02.
Max.
0.41
0.75
1
100
500
-
Unit
V
nA
pF
Test Conditions
I_F=1mA
I_F=10mA
I_F=15mA
V_R=50V
V_R=70V
V_R = 0V, f=1.0MHz
http://www.SeCoSGmbH.com/
22-Nov-2013 Rev. B
Any changes of specification will not be informed individually.
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