SCS521DS_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Silicon Epitaxial Planar Schottky Barrier Rectifiers

Elektronische Bauelemente
SCS521DS
0.1 A, 30 V
Silicon Epitaxial Planar Schottky Barrier Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
● Silicon epitaxial planar Schottky barrier Diodes
● Small surface mounting type
● High reliability
DFNWB
APPLICATION
● High speed switching For Detection
● For portable equipment:
(i.e. Mobile phone, MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
PACKAGE INFORMATION
Weight: 0.0123 g (approximately)
1
Cathode
MARKING CODE
Cathode ^{- F +}Anode
2
Anode
REF.
A
B
C
D
Millimeter
Min. Max.
0.55 0.65
0.95 1.05-
0.4
0.5
0
0.05
REF.
E
F
G
H
Millimeter
Min. Max.
0.15 0.35
0.05REF
0.4
0.6
0.65TYP
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Single diode at TA = 25°C)
Parameter
Symbol
Limits
Unit
DC Reverse Voltage
VR
30
V
Mean Rectifying Current
IO
100
mA
Peak Forward Surge Current
IFSM
1.0
A
Junction, Storage Temperature
TJ, TSTG
+125, -40 ~ +125
℃
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified)
Parameters
Symbol Min.
Typ.
Max.
Forward Voltage
Reverse Current
VF
-
-
0.35
IR
-
-
10
Unit
V
uA
Test Conditions
IF = 10mA
VR = 10V
11-Nov-2009 Rev. B
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