SCS521DS Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Silicon Epitaxial Planar Schottky Barrier Rectifiers

Elektronische Bauelemente
SCS521DS
0.1 A, 30 V
Silicon Epitaxial Planar Schottky Barrier Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
● Silicon epitaxial planar Schottky barrier Diodes
● Small surface mounting type
● High reliability
WBFBP02C
APPLICATION
● High speed switching For Detection
● For portable equipment:
(i.e. Mobile phone, MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
PACKAGE INFORMATION
Weight: 0.0123 g (approximately)
1
Cathode
MARKING CODE
Cathode ^{- F +}Anode
LC
2
Anode
D
J
M
H
M
B
EF
G
A
K
1
2
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
0.950 1.050
0.550 0.650
0.450 0.550
0.450 REF.
0.400 REF.
0.275 0.325
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.275 0.325
0.275 0.325
0.275 0.325
0.675 0.725
0.010 0.070
0.010 REF.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Single diode at T_A = 25°C)
Parameter
Symbol
Limits
Unit
DC Reverse Voltage
V_R
30
V
Mean Rectifying Current
I_O
100
mA
Peak Forward Surge Current
I_FSM
1.0
A
Junction, Storage Temperature
T_J, T_STG
+125, -40 ~ +125
℃
ELECTRICAL CHARACTERISTICS (at T_A = 25°C unless otherwise specified)
Parameters
Symbol Min.
Typ.
Max.
Forward Voltage
Reverse Current
V_F
-
-
0.35
I_R
-
-
10
Unit
V
uA
Test Conditions
I_F = 10mA
V_R = 10V
01-June-2008 Rev. A
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