SCS40STN Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Silicon Epitaxial Planar Schottky Barrier Rectifiers

Elektronische Bauelemente
SCS40STN
0.12 A, 40 V
Silicon Epitaxial Planar Schottky Barrier Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
Planar Schottky barrier diode with an integrated guard ring
for stress protection
FEATURES
● Low diode capacitance
● Low forward voltage
● Guard ring protected
● High breakdown voltage
APPLICATION
● Ultra high-speed switching
● Voltage clamping
● Mobile communication ,digital (still) cameras ,
PDAs and PCMCIA cards
MARKING
S6
WBFBP-02C
LC
D
J
M
H
M
B
EF
G
A
K
 _
REF.
A
B
C
D
E
F
Millimeter
Min.
0.950
0.550
0.450
Max.
1.050
0.650
0.550
0.450 REF.
0.400 REF.
0.275 0.325
REF.
G
H
J
K
L
M
Millimeter
Min.
0.275
0.275
0.275
Max.
0.325
0.325
0.325
0.675 0.725
0.010 0.070
0.010 REF.
PACKAGE INFORMATION
Package
MPQ
WBFBP-02C
10K
Leader Size
7 inch
MAXIMUM RATINGS CHARACTERISTICS(T_A=25°C unless otherwise specified)
Parameter
DC reverse voltage
Forward continuous current
Peak forward surge current @ Tp< 10ms
Junction, Storage Temperature Range
Symbol
V_R
I_F
I_FSM
T_J, T_STG
Limits
40
120
200
150, -55 ~ 150
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameters
Forward Voltage
Symbol
V_F
Min.
-
-
-
Typ.
-
-
-
Reverse Current¹
-
-
I_R
-
-
Diode capacitance
Note:
1. Pulse Test: tp=300μs; δ=0.02.
C_d
-
-
Max.
0.38
0.5
1
1
10
5
Unit
V
mA
mA
℃
Unit
V
μA
pF
Test Conditions
I_F=1mA
I_F=10mA
I_F=40mA
V_R=30V
V_R=40V
V_R =0, f=1.0MHz
http://www.SeCoSGmbH.com/
13-Dec-2013 Rev. B
Any changes of specification will not be informed individually.
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