SCS202NF_09 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Small Signal Switching Diode

Elektronische Bauelemente
SCS202NF
80 V, 300 mA
Plastic-Encapsulated, Dual Series Chips
Small Signal Switching Diode
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
z Ultra high speed switching
z High reliability
z Suitable for high packaging density layout
z Fast reverse recovery time : t_rr = 1.5ns (typ.)
z Construction: silicon epitaxial planar
PACKAGING INFORMATION
z Four types of packaging are available
z Weight: 0.0078 g (Approx.)
SOT-323
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
MARKING CODE
N , A3
REF.
A
B
C
D
E
Millimeter
Min. Max.
2.00 2.20
2.15 2.45
1.15 1.35
0.90 1.10
1.20 1.40
REF.
F
G
H
J
Millimeter
Min. Max.
0.20 0.40
-
-
0.525 REF.
0.08 0.15
ABSOLUTE MAXIMUM RATINGS (each diode)
Parameter
Peak Reverse Voltage
DC Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current 1μS
Total Power Dissipation
Junction, Storage Temperature
Symbol
V_RM
V_R
I_FM
I_O
I_SURGE
P_D
T_J, T_STG
Ratings
80
80
300
100
4
200
+150, -55 ~ +150
Unit
V
V
mA
mA
A
mW
°C
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)(each diode)
Parameter
Symbol
Forward Voltage
V_F
Reverse Voltage Leakage Current
I_R
Diode Capacitance
C_T
Reverse Recovery Time
T_RR
Notes: 1. FR–5 = 1.0 X 0.75 X 0.062 in.
2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
1.2
0.1
3.5
4.0
Unit
V
μA
pF
nS
Test Conditions
I_F = 100 mA
V_R = 70V
V_R = 6 V, f = 1 MHz
V_R = 6 V, I_F = 5 mA
01-April-2009 Rev. B
Page 1 of 2