SCS0240DF_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Silicon Epitaxial Planar Schottky Barrier Rectifiers

Elektronische Bauelemente
SCS0240DF
0.2 A, 40 V
Silicon Epitaxial Planar Schottky Barrier Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
● Low turn-on voltage
● Fast switching
● PN junction guard for transient and ESD protection
● Designed for surface mount application
● Plastic material-UL recognition flammability
classification 94V-O
APPLICATION
● Surface mount fast switching diode
DFN1006-2
CD
B
A
G
F
E
H
F
REF.
A
B
C
D
Millimeter
Min. Max.
0.55 0.675
0.95 1.075
0.47 0.53
0
0.05
REF.
E
F
G
H
Millimeter
Min. Max.
0.20 0.30
0.05REF
0.45 0.55
0.65TYP
PACKAGE INFORMATION
Product
SCS0240DF
Marking Code
43

Cathode

Anode
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Single diode at T_A = 25°C)
Parameter
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC reverse voltage
Forward continuous current
Peak forward surge current @ < 1.0 s
Power Dissipation
Thermal resistance junction to ambient
Junction, Storage Temperature Range
Symbol
V_RRM
V_RWM
V_R
I_F
I_FSM
P_d
R_θJA
T_J, T_STG
Limits
40
40
40
200
600
200
625
-55 ~ +125
Unit
V
V
V
mA
mA
mW
℃/W
℃
ELECTRICAL CHARACTERISTICS (at T_A = 25°C unless otherwise specified)
Parameters
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Capacitance between terminals
Symbol
V_(BR)R
V_F
I_R
C_T
Min.
40
-
-
-
-
-
Typ.
-
-
-
-
20
4
Max.
-
0.38
0.5
1.0
200
5
Reverse Recovery Time
T_RR
-
-
5
Unit
V
V
nA
pF
ns
Test Conditions
I_R= 10A
I_F = 1.0mA
I_F = 10mA
I_F = 40mA
V_R = 30V
V_R = 0V, f=1.0MHz
I_F =I_R= 10mA,
R_L=100Ω
http://www.SeCoSGmbH.com/
08-Dec-2010 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2