SCP35N03J Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – 35A, 30V, RDS(ON) 7m
(ohm) N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SCP35N03J
35A, 30V, R_DS(ON) 7mΩ
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SCP35N03J uses advanced trench technology and design to
provide excellent R_DS(ON) with low gate charge. It can be used
in a wide variety of applications
DFN3x3-8J
FEATURES
High density cell design for ultra low R_DS(ON)
Fully Characterized avalanche voltage and current
Good stability and uniformity with high E_AS
Excellent package for good heat dissipation
Special processing technology for high ESD capability
APPLICATIONS
High side switch in POL DC/DC converter
Secondary side synchronous rectifier
MARKING
= Date code
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
3.2
3.4
3
3.2
3.25 3.45
3
3.2
0.65BSC.
2.39 2.59
REF.
G
H
I
J
K
L
Millimeter
Min. Max.
1.78 1.98
0.25 0.35
0.35TYP.
0.6TYP.
0.1
0.25
0.7
0.8
PACKAGE INFORMATION
Package
MPQ
DFN3x3-8J
3K
Leader Size
13 inch
S
D
S
D
S
D
G
D
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current ¹
ID
Pulsed Drain Current
IDM
Single Pulse Avalanche Energy ²
EAS
Power Dissipation
PD
Thermal Resistance from Junction to Ambient ¹
RθJA
Lead Temperature for Soldering Purposes@1/8’’ from case for 10s
TL
Junction and Storage Temperature Range
Notes:
1. Mounted on a 25.4mm × 25.4mm × 0.8mm glass epoxy board.
2. Test condition: VDD=15V, L=0.1mH, RG=25Ω, Starting TJ=25°C.
TJ, TSTG
Rating
30
±20
35
120
150
1.5
83.3
260
150, -55~150
Unit
V
V
A
A
mJ
W
°C / W
°C
°C
http://www.SeCoSGmbH.com/
02-Jun-2017 Rev. D
Any changes of specification will not be informed individually.
Page 1 of 3