SCG4153S Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – 0.915 A, 20 V, RDS(on) 570 m
(ohm) N Channel Enhancement MOSFET

Elektronische Bauelemente
SCG4153S
0.915 A, 20 V, R_{DS(O )} 570 mΩ
Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low R_DS(on) Improving System Efficiency
Low Threshold Voltage ,1.5V Rated
ESD Protected Gate
Pb-Free Packages are Available
APPLICATION
Load/Power Switches
Power Supply Converter Circuits
Battery Management
Portables like Cell Phones, PDAs, Digital Cameras,
Pagers,etc
SOT-523
A
M
3
3
Top View
CB
1
2
K
L
E
1
2
D
F
G
H
J
MARKING
X
PACKAGE INFORMATION
Package
MPQ
SOT-523
3K
Leader Size
7 inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.5
1.7
1.45 1.75
0.7
0.9
0.7
0.9
0.9
1.1
0.15 0.35
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
-
0.1
0.55 REF.
0.1
0.2
-
0.5 TYP.
0.25 0.35
Top View
MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current ¹
ID
Total Power Dissipation ¹
PD
Operating Junction & Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance Junction-ambient ¹
RθJA
Ratings
20
±6
0.915
150
150, -55~150
833
Unit
V
V
A
mW
°C
°C / W
http://www.SeCoSGmbH.com/
23-Jan-2017 Rev.A
Any changes of specification will not be informed individually.
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